Organizing committee

Since 2012 EDM has been held under the patronage of Electronics and Electrical Engineering Department (Novosibirsk State Technical University).

Sergey A. Kharitonov – Dr. Sc., Prof., Head of the Department of Electronics and Electrical Engineering, NSTU, Russia.

Igor G. Neizvestnyi – Dr. Sc., Prof., Corresponding Member RAS, Counsellor of Rzhanov Institute of Semiconductor Physics, SB RAS, Russia;

Vladimir A.Khrustalev – Dr. Sc., Prof., Dean of the Faculty of Radio Engineering and Electronics, NSTU, Russia.

Program and Organizing Committee:

Sergey V. Brovanov – Dr. Sc., Associate Prof., Head of the Department of , NSTU, Novosibirsk, Russia;

Vladislav Yu. Vasiliev – Dr.Sc., Prof. of the Department of Semiconductors and Microelectronics, NSTU, Novosibirsk, Russia;

Helmut Weiss - Dr.Sc., Prof., Head of Institute of Electrical Engineering, Montanuniversität, Leoben, Austria;

Svetlana V. Vorobyova – Cand.Sc., Associate Prof. of the Department Radio Engineering Systems SibSUTIS, Novosibirsk, Russia;

Vladimir А. Gaisler – Dr.Sc., Prof., Head of the Department of Semiconductors and Microelectronics, NSTU, Novosibirsk, Russia;

Viktor A.Gridchin – Dr. Sc., Prof., Head of the Department of Semiconductors and Microelectronics, NSTU, Novosibirsk, Russia;

Gennady S. Evtushenko – Dr.Sc., Prof. the Department of Industrial and Medical Electronics, TPU, Tomsk, Russia;

Gennady S. Zinoviev – Dr. Sc., Prof. Department of Electronics and Electrical Engineering, NSTU, Novosibirsk, Russia;

Vladimir K. Makukha – Dr. Sc., Prof., Head of the Department of Electron Devices, NSTU, Novosibirsk, Russia;

Alexandr B. Markhasin - Dr. Sc., Prof., Head of the Department of Telecommunications Networks and Computing Facilities, SibSUTIS, Novosibirsk, Russia;

Evgeny V. Sypin – Cand.Sc., Associate Prof., Department of Methods and Means of Measurement and Automation of Biysk Technological Institute, Biysk, Russia;

Huawei L. Hwang – Prof., Shanghai Jiao Tong University, China;

Vladimir N.Khmelev – Dr.Sc., Prof., Rector for Scientific Work of Biysk Technological Institute, Biysk, Russia;

Natalya L. Shvarts – Cand.Sc., Head of the Group of Electronic and Microelectronic Processes Modeling Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia.

Secretaries of the Conference:

Elena V. Reshetnikova – Junior Researcher of the Department of Electronics and Electrical Engineering, NSTU, Novosibirsk, Russia;

Alexandra I. Khristolyubova – Assistant of the Department of Electronics and Electrical Engineering, NSTU, Novosibirsk, Russia;

Regina Yu. Sarakhanova - postgraduate student of the Department of Electronics and Electrical Engineering, NSTU, Novosibirsk, Russia.